Details of a Researcher

写真b

IMANISHI Masayuki

Mail Address
Gender	Male

2013.04.01 - 2016.03.28, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Doctoral Program Student
2016.04.01 - 2016.08.31, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Specially Appointed Researcher
2016.09.01 - 2018.03.31, Center for Atomic and Molecular Technologies, Graduate School of Engineering, Assistant Professor
2018.04.01 - , Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Assistant Professor

Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes, 1. Robert Rounds, Biplab Sarkar, Tomasz Sochacki, Michal Bockowski, Masayuki Imanishi, Yusuke Mori, Ronny Kirste, Ramón Collazo, and Zlatko Sitar, Journal of Applied Physics，Vol.124, No.10, pp.105106-1/105106-7 , 2018.09, Papers
Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy , T. Hamachi, S. Takeuchi, T. Tohei, M. Imanishi, M. Imade, Y. Mori, and A. Sakai, Journal of Applied Physics，Vol.123、No.14, pp.16147/1-6, 2018.04, Papers
Improvement of metastable crystal of acetaminophen via control of crystal growth rate, K. Nii, M, Maruyama, S. Okada, H. Adachi, K. Takano, S. Murakami, H. Y. Yoshikawa, H. Matsumura, T. Inoue, M. Imanishi, K. Tsukamoto, M. Yoshimura, and Y. Mori, Applied Physics Express，Vol.11, pp.035501-1/035501-4, 2018.02, Papers
Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation, A. Uedono, M. Imanishi, M. Imade, M.Yoshimura, S. Ishibashi, M. Sumiya, and Y. Mori, Journal of Crystal Growth，Vol.475, pp.261-265, 2017.10, Papers
Growth of bulk GaN crystals by the Na-flux point seed technique, Y. Mori, M. Imade, M. Imanishi and M. Yoshimura，The 8th Asia-Pacific Workshop on Widegap Semiconductors(APWS)，MOBDI 1, 2017.10, Conference Report / Oral Presentation