Organization 【 display / non-display 】
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2013.04.01 - 2016.03.28, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Doctoral Program Student
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2016.04.01 - 2016.08.31, Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Specially Appointed Researcher
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2016.09.01 - 2018.03.31, Center for Atomic and Molecular Technologies, Graduate School of Engineering, Assistant Professor
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2018.04.01 - , Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Assistant Professor
Academic Papers 【 display / non-display 】
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Leakage current analysis for dislocations in Na-flux GaN bulk single crystals by conductive atomic force microscopy , T. Hamachi, S. Takeuchi, T. Tohei, M. Imanishi, M. Imade, Y. Mori, and A. Sakai, Journal of Applied Physics，Vol.123、No.14, pp.16147/1-6, 2018.04, Papers
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Improvement of metastable crystal of acetaminophen via control of crystal growth rate, K. Nii, M, Maruyama, S. Okada, H. Adachi, K. Takano, S. Murakami, H. Y. Yoshikawa, H. Matsumura, T. Inoue, M. Imanishi, K. Tsukamoto, M. Yoshimura, and Y. Mori, Applied Physics Express，Vol.11, pp.035501-1/035501-4, 2018.02, Papers
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Vacancy-type defects in bulk GaN grown by the Na-flux method probed using positron annihilation, A. Uedono, M. Imanishi, M. Imade, M.Yoshimura, S. Ishibashi, M. Sumiya and Y. Mori, Journal of Crystal Growth，Vol.475, pp.261-265, 2017.10, Papers
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Control of dislocation morphology and lattice distortion in Na-flux GaN crystals, S. Takeuchi, Y. Mizuta, M. Imanishi, M. Imade, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, and A. Sakai, Journal of Applied Physics，Vol.122, pp.105303 -1-6 , 2017.09, Papers
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Homoepitaxial HVPE growth on GaN wafers manufactured by the Na-flux method, M. Imanishi, T. Yoshida, T. Kitamura, K. Murakami, M. Imade, M. Yoshimura, M. Shibata, Y. Tsusaka, J. Matsui, and Y. Mori, Crystal Growth & Design，Vol.17, No.7, pp3806-3811, 2017.06, Papers