School personnel information

写真b

SUGIMOTO Satoshi


Keyword

plasma physics, plasma process measurement, surface treatment

URL

http://www.camt.eng.osaka-u.ac.jp/

Organization 【 display / non-display

  • 1998.05.01 - 2003.03.31, Graduate School of Engineering, Associate Professor

  • 2003.04.01 - 2007.03.31, Science and Technology Center for Atoms,Molecules and Ions Control, Graduate School of Engineering, Associate Professor

  • 2007.04.01 - 2013.03.31, Science and Technology Center for Atoms,Molecules and Ions Control, Graduate School of Engineering, Associate Professor

  • 2013.04.01 - 2013.04.15, Center for Atomic and Molecular Technologies, Graduate School of Engineering, Associate Professor

  • 2013.04.16 - , Center for Atomic and Molecular Technologies, Graduate School of Engineering, Associate Professor

Education 【 display / non-display

Osaka University Faculty of Engineering  Graduated 1981.03
Osaka University Graduate School, Division of Engineering  Completed 1983.03
Osaka University Graduate School, Division of Engineering  Completed 1986.03

Employment Record 【 display / non-display

Research associate, Osaka University 1986.04 - 1996.06
Associate Professor, Osaka University 1996.07 - 2007.03
Associate Professor, Osaka University 2007.04 -

Research topics 【 display / non-display

  • Physical property of a hydrogen plasma and its appication
    Fundamental plasma-related, Earth resource engineering, Energy sciences-related

  • Development of measurent methods and control techniqes for plasma processes
    Semiconductors, optical properties of condensed matter and atomic physics-related, Measurement engineering-related, Fundamental plasma-related

  • Development of a processing plasma and its application
    Fundamental plasma-related, Thin film/surface and interfacial physical properties-related

 

Academic Papers 【 display / non-display

  • Identification of fragment ions produced from hexamethyldisilazane and production of low-energy mass-selected fragment ion beam, S. Yoshimura, S. Sugimoto, T. Takeuchi, K. Murai, M. Kiuchi, Nuclear Instruments and Methods in Physics Research B,Vol. 430, pp. 1-5, 2018.09, Papers

  • Low-energy mass-selected ion beam production of fragments from tetraethylorthosilicate for the formation of silicon dioxide film, S. Yoshimura, S. Sugimoto, T. Takeuchi, K. Murai, M. Kiuchi, Thin Solid Films,Vol. 655, pp. 22-26, 2018.06, Papers

  • Injected ion energy dependence of SiC film deposited by low-energy SiC3H9+ ion beam produced from hexamethyldisilane, S. Yoshimura, S. Sugimoto, T. Takeuchi, K. Murai, M. Kiuchi, Nuclear Instruments and Methods in Physics Research B,Vol. 420, pp. 6-11, 2018.04, Papers

  • Deposition of indium nanoparticles on powdered material by pulse arc plasma to synthesize catalysts for Friedel-Crafts alkylation, S. Yoshimura, Y. Nishimoto, S. Sugimoto, M. Kiuchi, M. Yasuda, e-Journal of Surface Science and Nanotechnology,Vol. 16, pp. 105-110, 2018.04, Papers

  • Amino Group Surface Modification of Cell Culture Polystyrene Dishes by an Inverter Plasma Process, Satoshi Sugimoto, Tomoko Ito, Kai Kubota, Kazuma Nishiyama and Satoshi Hamaguchi ,The 10th EU-Japan Joint Symposium on Plasma Processing (JSPP2017), 2017.12, Conference Report / Oral Presentation

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Patents / Utility models / Designs 【 display / non-display

  • Japan, Carbon nanotube formation device, Carbon nanotube formation Method, Satoshi A. Sugimoto etal., 4919272(Registration), 2006.08, 2012.02

  • Japan, SiC film formation method, Y. Agawa, M. Kiuchi, S. Sugimoto, 4674777(Registration), 2000.08, 2011.02

  • Japan, Film formation method, Satoshi A. Sugimoto etal., 4284438(Registration), 2003.03, 2009.04

  • Japan, Surface processing method and an equipment for polymer films, and polymer films and polymeric composite films processed using the corresponding method, M. Kiuchi, S. Sugimoto, S. Goto etal., 4193040(Registration), 2003.01, 2008.10