School personnel information

写真b

SUGIMOTO Satoshi


Keyword

plasma physics, plasma process measurement, surface treatment

Mail Address

Mail Address

URL

http://www.camt.eng.osaka-u.ac.jp/

Organization 【 display / non-display

  • 1998.05.01 - 2003.03.31, Graduate School of Engineering, Associate Professor

  • 2003.04.01 - 2007.03.31, Science and Technology Center for Atoms,Molecules and Ions Control, Graduate School of Engineering, Associate Professor

  • 2007.04.01 - 2013.03.31, Science and Technology Center for Atoms,Molecules and Ions Control, Graduate School of Engineering, Associate Professor

  • 2013.04.01 - 2013.04.15, Center for Atomic and Molecular Technologies, Graduate School of Engineering, Associate Professor

  • 2013.04.16 - , Center for Atomic and Molecular Technologies, Graduate School of Engineering, Associate Professor

Education 【 display / non-display

Osaka University Faculty of Engineering  Graduated 1981.03
Osaka University Graduate School, Division of Engineering  Completed 1983.03
Osaka University Graduate School, Division of Engineering  Completed 1986.03

Employment Record 【 display / non-display

Research associate, Osaka University 1986.04 - 1996.06
Associate Professor, Osaka University 1996.07 - 2007.03
Associate Professor, Osaka University 2007.04 -

Research topics 【 display / non-display

  • Development of measurent methods and control techniqes for plasma processes
    Semiconductors, optical properties of condensed matter and atomic physics-related, Measurement engineering-related, Fundamental plasma-related

  • Development of a processing plasma and its application
    Fundamental plasma-related, Thin film/surface and interfacial physical properties-related

  • Physical property of a hydrogen plasma and its appication
    Fundamental plasma-related, Earth resource engineering, Energy sciences-related

 

Academic Papers 【 display / non-display

  • Indium nano-particles deposition to zeolite powder by a pulse arc plasma processs for synthesizing catalysts, S. Yoshimura, Y. Nishimoto, S. Sugimoto, M. Kiuchi, M. Yasuda,The 8th International Symposium on Surface Science (ISSS-8), 22-26 October, 2017, Epochal Tsukuba, Tsukuba, Japan (6PN-113)., 2017.10, International Conference(Non Proceeding)

  • Low-energy mass-selected ion beam production of fragments produced from hexamethyldisiloxane for the formation of silicon oxide film, S. Yoshimura, S. Sugimoto, K. Murai, M. Kiuchi, Surface and Coatings Technology,Vol. 313, pp. 402-406, (2017)., 2017.03, Papers

  • Low-energy SiC2H6+ and SiC3H9+ ion beam productions by the mass-selection of fragments produced form hexamethyldisilane for SiC film formations, S. Yoshimura, S. Sugimoto, K. Murai, M. Kiuchi, AIP Advances,Vol. 6, No. 12, 125029-1-6, (2016), 2016.12, Papers

  • Low-energy mass-selected ion beam production of fragments produced from hexamethyldisilane for SiC film formation, S. Yoshimura, S. Sugimoto, M. Kiuchi, Journal of Applied Physics,Vol. 119, No, 10, 103302-1-4, 2016.03, Papers

  • Indium implantation onto zeolite for development of novel catalysts with a ion beam system, Satoru Yoshimura, Masato Kiuchi, Yoshihiro Nishimoto, Makoto Yasuda, Akio Baba, Yoshiaki Mokuno, Satoshi Sugimoto, Satoshi Hamaguchi, Journal of Smart Processing -for Materials, Environment & Energy-,Vol. 4, No. 5, pp. 228-233, 2015.09, Papers(In Japanese)

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Patents / Utility models / Designs 【 display / non-display

  • Japan, Carbon nanotube formation device, Carbon nanotube formation Method, Satoshi A. Sugimoto etal., 4919272(Registration), 2006.08, 2012.02

  • Japan, SiC film formation method, Y. Agawa, M. Kiuchi, S. Sugimoto, 4674777(Registration), 2000.08, 2011.02

  • Japan, Film formation method, Satoshi A. Sugimoto etal., 4284438(Registration), 2003.03, 2009.04

  • Japan, Surface processing method and an equipment for polymer films, and polymer films and polymeric composite films processed using the corresponding method, M. Kiuchi, S. Sugimoto, S. Goto etal., 4193040(Registration), 2003.01, 2008.10